Optimization Input Power to Obtain the Stable Annealing Conditions of a Plasma Annealing System at Atmospheric Pressure
نویسندگان
چکیده
We investigated one-step, rapidly cleaning, and annealing thin wire copper using plasma generated by Dielectric-Barrier Discharge (DBD) at atmospheric pressure in a coaxial cylindrical reactor. The thin copper wire cleaning and annealing processes strongly depend on the input power, the dimensions of the reactor, and the annealing duration. The minimum input power was calculated under stable annealing conditions. When obtaining the conditions, an equivalent RLC circuit model was obtained by analyzing the sheath dynamics and power loss to the ions, electrons, and heating dielectrics during high frequency, high voltage in helium. In addition, the plasma parameters and the power balance in this system were considered. To demonstrate the optimal absorbed power for the plasma annealing system for the analysis model, comparisons of absorbed power, surface temperature of copper wire, and RMS current and voltage between the analysis model and experiments were investigated. For optimal problems, minimal absorbed power is an objective function. The design parameters were electrical efficiencies (voltage, current, frequency, and a power factor), the dimensions of reactor (the diameter of the thin wire, the discharge gap, and the discharge length), and the duration of the annealing. The inequality constraint was the breakdown discharge conditions. The equality constraints were a stable temperature for the annealing and rapid annealing conditions. The optimization results at the smallest absorbed power showed that the 0.2 mm diameter copper wire was annealed at a 20% elongation rate in the plasma reactor at an annealing velocity of 0.714 m/s.
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تاریخ انتشار 2010